Dan Nystedt· @dnystedt · X·· 7 天前AI 评分57
AI 导读
Kioxia 公布 MSA-CBA 设计，用于超高密度 3D NAND 闪存 BiCS Flash，采用铜直接键合把多片 218 层存储阵列晶圆堆叠到 CMOS 晶圆上，该技术提供通向 1000 层以上的路径。原型器件已成功实现 QLC（4 bits/cell）操作和高温数据保持。
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正文
Kioxia details its MSA-CBA design for ultra-high-density 3D NAND flash memory (BiCS Flash), using copper direct bonding to stack multiple 218-layer cell array wafers onto a CMOS wafer. The technology offers a path to 1,000+ layers. Prototype devices have also demonstrated successful QLC (4 bits/cell) operation and high-temperature data retention. #Kioxia $SNDK $SSNLF $SKHY #semiconductors https://www.kioxia.com/en-jp/rd/technology/topics/topics-96.html
来源：Dan Nystedt · x.com